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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FETs, MOSFETs - Single > TPW1R306PL,L1Q
TPW1R306PL,L1Q
TPW1R306PL,L1Q
Part Number:
TPW1R306PL,L1Q
Výrobce:
Toshiba Semiconductor and Storage
Popis:
X35 PB-F POWER MOSFET TRANSISTOR
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
44399 Pieces
Čas doručení:
1-2 days
Datový list:
TPW1R306PL,L1Q.pdf
Dotaz

Úvod

We can supply TPW1R306PL,L1Q, use the request quote form to request TPW1R306PL,L1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPW1R306PL,L1Q.The price and lead time for TPW1R306PL,L1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPW1R306PL,L1Q.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:2.5V @ 1mA
Vgs (Max):±20V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:8-DSOP Advance
Série:U-MOSIX-H
RDS On (Max) @ Id, Vgs:1.29 mOhm @ 50A, 10V
Ztráta energie (Max):960mW (Ta), 170W (Tc)
Obal:Tape & Reel (TR)
Paket / krabice:8-PowerVDFN
Ostatní jména:TPW1R306PL,L1Q(M
TPW1R306PLL1QTR
Provozní teplota:175°C
Typ montáže:Surface Mount
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:8100pF @ 30V
Nabíjení brány (Qg) (Max) @ Vgs:91nC @ 10V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):4.5V, 10V
Drain na zdroj napětí (Vdss):60V
Detailní popis:N-Channel 60V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance
Proud - kontinuální odtok (Id) @ 25 ° C:260A (Tc)
Email:[email protected]

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