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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FETs, MOSFETs - Single > TK62J60W,S1VQ
TK62J60W,S1VQ
TK62J60W,S1VQ
Part Number:
TK62J60W,S1VQ
Výrobce:
Toshiba Semiconductor and Storage
Popis:
MOSFET N CH 600V 61.8A TO-3P(N)
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
62692 Pieces
Čas doručení:
1-2 days
Datový list:
TK62J60W,S1VQ.pdf
Dotaz

Úvod

We can supply TK62J60W,S1VQ, use the request quote form to request TK62J60W,S1VQ pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK62J60W,S1VQ.The price and lead time for TK62J60W,S1VQ depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK62J60W,S1VQ.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:3.7V @ 3.1mA
Vgs (Max):±30V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:TO-3P(N)
Série:DTMOSIV
RDS On (Max) @ Id, Vgs:38 mOhm @ 30.9A, 10V
Ztráta energie (Max):400W (Tc)
Obal:Tube
Paket / krabice:TO-3P-3, SC-65-3
Ostatní jména:TK62J60W,S1VQ(O
TK62J60WS1VQ
Provozní teplota:150°C (TJ)
Typ montáže:Through Hole
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:6500pF @ 300V
Nabíjení brány (Qg) (Max) @ Vgs:180nC @ 10V
Typ FET:N-Channel
FET Feature:Super Junction
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):10V
Drain na zdroj napětí (Vdss):600V
Detailní popis:N-Channel 600V 61.8A (Ta) 400W (Tc) Through Hole TO-3P(N)
Proud - kontinuální odtok (Id) @ 25 ° C:61.8A (Ta)
Email:[email protected]

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