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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FETs, MOSFETs - Single > TK3A65D(STA4,Q,M)
TK3A65D(STA4,Q,M)
TK3A65D(STA4,Q,M)
Part Number:
TK3A65D(STA4,Q,M)
Výrobce:
Toshiba Semiconductor and Storage
Popis:
MOSFET N-CH 650V 3A TO-220SIS
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
60001 Pieces
Čas doručení:
1-2 days
Datový list:
1.TK3A65D(STA4,Q,M).pdf2.TK3A65D(STA4,Q,M).pdf
Dotaz

Úvod

We can supply TK3A65D(STA4,Q,M), use the request quote form to request TK3A65D(STA4,Q,M) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK3A65D(STA4,Q,M).The price and lead time for TK3A65D(STA4,Q,M) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK3A65D(STA4,Q,M).We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:4.4V @ 1mA
Vgs (Max):±30V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:TO-220SIS
Série:π-MOSVII
RDS On (Max) @ Id, Vgs:2.25 Ohm @ 1.5A, 10V
Ztráta energie (Max):35W (Tc)
Obal:Tube
Paket / krabice:TO-220-3 Full Pack
Ostatní jména:TK3A65D(STA4QM)
TK3A65DSTA4QM
Provozní teplota:150°C (TJ)
Typ montáže:Through Hole
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:540pF @ 25V
Nabíjení brány (Qg) (Max) @ Vgs:11nC @ 10V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):10V
Drain na zdroj napětí (Vdss):650V
Detailní popis:N-Channel 650V 3A (Ta) 35W (Tc) Through Hole TO-220SIS
Proud - kontinuální odtok (Id) @ 25 ° C:3A (Ta)
Email:[email protected]

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