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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FETs, MOSFETs - Single > IXTT3N200P3HV
IXTT3N200P3HV
IXTT3N200P3HV
Part Number:
IXTT3N200P3HV
Výrobce:
IXYS Corporation
Popis:
2000V TO 3000V POLAR3 POWER MOSF
Stav volného vedení / RoHS:
Bez olova bez výjimky / V souladu RoHS
dostupné množství:
68738 Pieces
Čas doručení:
1-2 days
Datový list:
IXTT3N200P3HV.pdf
Dotaz

Úvod

We can supply IXTT3N200P3HV, use the request quote form to request IXTT3N200P3HV pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTT3N200P3HV.The price and lead time for IXTT3N200P3HV depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTT3N200P3HV.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:5V @ 250µA
Vgs (Max):±20V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:TO-268
Série:-
RDS On (Max) @ Id, Vgs:8 Ohm @ 1.5A, 10V
Ztráta energie (Max):520W (Tc)
Obal:Tube
Paket / krabice:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Provozní teplota:-55°C ~ 150°C (TJ)
Typ montáže:Surface Mount
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Výrobní standardní doba výroby:24 Weeks
Stav volného vedení / RoHS:Lead free by exemption / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:1860pF @ 25V
Nabíjení brány (Qg) (Max) @ Vgs:70nC @ 10V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):10V
Drain na zdroj napětí (Vdss):2000V
Detailní popis:N-Channel 2000V 3A (Tc) 520W (Tc) Surface Mount TO-268
Proud - kontinuální odtok (Id) @ 25 ° C:3A (Tc)
Email:[email protected]

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