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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FETs, MOSFETs - Single > IXFQ60N60X
IXFQ60N60X
IXFQ60N60X
Part Number:
IXFQ60N60X
Výrobce:
IXYS Corporation
Popis:
MOSFET N-CH 600V 60A TO3P
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
56178 Pieces
Čas doručení:
1-2 days
Datový list:
IXFQ60N60X.pdf
Dotaz

Úvod

We can supply IXFQ60N60X, use the request quote form to request IXFQ60N60X pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFQ60N60X.The price and lead time for IXFQ60N60X depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFQ60N60X.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:4.5V @ 8mA
Vgs (Max):±30V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:TO-3P
Série:HiPerFET™
RDS On (Max) @ Id, Vgs:55 mOhm @ 30A, 10V
Ztráta energie (Max):890W (Tc)
Obal:Tube
Paket / krabice:TO-3P-3, SC-65-3
Provozní teplota:-55°C ~ 150°C (TJ)
Typ montáže:Through Hole
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Výrobní standardní doba výroby:24 Weeks
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:5800pF @ 25V
Nabíjení brány (Qg) (Max) @ Vgs:143nC @ 10V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):10V
Drain na zdroj napětí (Vdss):600V
Detailní popis:N-Channel 600V 60A (Tc) 890W (Tc) Through Hole TO-3P
Proud - kontinuální odtok (Id) @ 25 ° C:60A (Tc)
Email:[email protected]

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