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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FETs, MOSFETs - Single > IXFN27N80Q
IXFN27N80Q
IXFN27N80Q
Part Number:
IXFN27N80Q
Výrobce:
IXYS Corporation
Popis:
MOSFET N-CH 800V 27A SOT-227B
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
28239 Pieces
Čas doručení:
1-2 days
Datový list:
IXFN27N80Q.pdf
Dotaz

Úvod

We can supply IXFN27N80Q, use the request quote form to request IXFN27N80Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFN27N80Q.The price and lead time for IXFN27N80Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFN27N80Q.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:4.5V @ 4mA
Vgs (Max):±20V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:SOT-227B
Série:HiPerFET™
RDS On (Max) @ Id, Vgs:320 mOhm @ 500mA, 10V
Ztráta energie (Max):520W (Tc)
Obal:Tube
Paket / krabice:SOT-227-4, miniBLOC
Provozní teplota:-55°C ~ 150°C (TJ)
Typ montáže:Chassis Mount
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Výrobní standardní doba výroby:14 Weeks
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:7600pF @ 25V
Nabíjení brány (Qg) (Max) @ Vgs:170nC @ 10V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):10V
Drain na zdroj napětí (Vdss):800V
Detailní popis:N-Channel 800V 27A (Tc) 520W (Tc) Chassis Mount SOT-227B
Proud - kontinuální odtok (Id) @ 25 ° C:27A (Tc)
Email:[email protected]

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