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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FETs, MOSFETs - Single > IXFN20N120
IXFN20N120
IXFN20N120
Part Number:
IXFN20N120
Výrobce:
IXYS Corporation
Popis:
MOSFET N-CH 1200V 20A SOT-227B
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
47271 Pieces
Čas doručení:
1-2 days
Datový list:
IXFN20N120.pdf
Dotaz

Úvod

We can supply IXFN20N120, use the request quote form to request IXFN20N120 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFN20N120.The price and lead time for IXFN20N120 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFN20N120.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:4.5V @ 8mA
Vgs (Max):±30V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:SOT-227B
Série:HiPerFET™
RDS On (Max) @ Id, Vgs:750 mOhm @ 500mA, 10V
Ztráta energie (Max):780W (Tc)
Obal:Tube
Paket / krabice:SOT-227-4, miniBLOC
Provozní teplota:-55°C ~ 150°C (TJ)
Typ montáže:Chassis Mount
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:7400pF @ 25V
Nabíjení brány (Qg) (Max) @ Vgs:160nC @ 10V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):10V
Drain na zdroj napětí (Vdss):1200V
Detailní popis:N-Channel 1200V 20A (Tc) 780W (Tc) Chassis Mount SOT-227B
Proud - kontinuální odtok (Id) @ 25 ° C:20A (Tc)
Email:[email protected]

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