TPN1600ANH,L1Q
TPN1600ANH,L1Q
Artikelnummer:
TPN1600ANH,L1Q
Tillverkare:
Toshiba Semiconductor and Storage
Beskrivning:
MOSFET N CH 100V 17A 8TSON-ADV
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
11179 Pieces
Leveranstid:
1-2 days
Datablad:
TPN1600ANH,L1Q.pdf

Introduktion

We can supply TPN1600ANH,L1Q, use the request quote form to request TPN1600ANH,L1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPN1600ANH,L1Q.The price and lead time for TPN1600ANH,L1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPN1600ANH,L1Q.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:4V @ 200µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:8-TSON Advance (3.3x3.3)
Serier:U-MOSVIII-H
Rds On (Max) @ Id, Vgs:16 mOhm @ 8.5A, 10V
Effektdissipation (Max):700mW (Ta), 42W (Tc)
Förpackning:Cut Tape (CT)
Förpackning / Fodral:8-PowerVDFN
Andra namn:TPN1600ANHL1QCT
Driftstemperatur:150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:1600pF @ 50V
Gate Laddning (Qg) (Max) @ Vgs:19nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):100V
detaljerad beskrivning:N-Channel 100V 17A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:17A (Tc)
Email:[email protected]

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