DMG7N65SJ3
Artikelnummer:
DMG7N65SJ3
Tillverkare:
Diodes Incorporated
Beskrivning:
MOSFET BVDSS: 501V 650V TO251
Ledningsfri status / RoHS-status:
Innehåller bly / RoHS-kompatibel
tillgänglig kvantitet:
28122 Pieces
Leveranstid:
1-2 days
Datablad:
DMG7N65SJ3.pdf

Introduktion

We can supply DMG7N65SJ3, use the request quote form to request DMG7N65SJ3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMG7N65SJ3.The price and lead time for DMG7N65SJ3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMG7N65SJ3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:TO-251
Serier:Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:1.4 Ohm @ 2.5A, 10V
Effektdissipation (Max):125W (Tc)
Förpackning:Tube
Förpackning / Fodral:TO-251-3, IPak, Short Leads
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Through Hole
Tillverkarens normala ledtid:22 Weeks
Ledningsfri status / RoHS-status:Contains lead / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:886pF @ 50V
Gate Laddning (Qg) (Max) @ Vgs:25nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):650V
detaljerad beskrivning:N-Channel 650V 5.5A (Tc) 125W (Tc) Through Hole TO-251
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:5.5A (Tc)
Email:[email protected]

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