Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 2.3V @ 250µA |
Vgs (Max): | +20V, -16V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PowerPAK® SO-8 |
Serie: | TrenchFET® Gen IV |
Rds On (Max) @ Id, VGS: | 0.88 mOhm @ 20A, 10V |
Vermogensverlies (Max): | 104W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | PowerPAK® SO-8 |
Andere namen: | SIR638ADP-T1-RE3TR |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 9100pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 165nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4.5V, 10V |
Drain naar de Bron Voltage (Vdss): | 40V |
gedetailleerde beschrijving: | N-Channel 40V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8 |
Current - Continuous Drain (Id) @ 25 ° C: | 100A (Tc) |
Email: | [email protected] |