SIE820DF-T1-E3
SIE820DF-T1-E3
Onderdeel nummer:
SIE820DF-T1-E3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N-CH 20V 50A 10-POLARPAK
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
20926 Pieces
Aflevertijd:
1-2 days
Data papier:
SIE820DF-T1-E3.pdf

Invoering

We can supply SIE820DF-T1-E3, use the request quote form to request SIE820DF-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIE820DF-T1-E3.The price and lead time for SIE820DF-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIE820DF-T1-E3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:2V @ 250µA
Vgs (Max):±12V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:10-PolarPAK® (S)
Serie:TrenchFET®
Rds On (Max) @ Id, VGS:3.5 mOhm @ 18A, 4.5V
Vermogensverlies (Max):5.2W (Ta), 104W (Tc)
Packaging:Cut Tape (CT)
Verpakking / doos:10-PolarPAK® (S)
Andere namen:SIE820DF-T1-E3CT
SIE820DFT1E3
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:4300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:143nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):2.5V, 4.5V
Drain naar de Bron Voltage (Vdss):20V
gedetailleerde beschrijving:N-Channel 20V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)
Current - Continuous Drain (Id) @ 25 ° C:50A (Tc)
Email:[email protected]

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