SIB417AEDK-T1-GE3
SIB417AEDK-T1-GE3
Onderdeel nummer:
SIB417AEDK-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET P-CH 8V 9A PWRPACK
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
38895 Pieces
Aflevertijd:
1-2 days
Data papier:
SIB417AEDK-T1-GE3.pdf

Invoering

We can supply SIB417AEDK-T1-GE3, use the request quote form to request SIB417AEDK-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIB417AEDK-T1-GE3.The price and lead time for SIB417AEDK-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIB417AEDK-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

bestek

Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:1V @ 250µA
Vgs (Max):±5V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:PowerPAK® SC-75-6L Single
Serie:TrenchFET®
Rds On (Max) @ Id, VGS:32 mOhm @ 3A, 4.5V
Vermogensverlies (Max):2.4W (Ta), 13W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:PowerPAK® SC-75-6L
Andere namen:SIB417AEDK-T1-GE3TR
SIB417AEDKT1GE3
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:878pF @ 4V
Gate Charge (Qg) (Max) @ Vgs:18.5nC @ 5V
FET Type:P-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):1.2V, 4.5V
Drain naar de Bron Voltage (Vdss):8V
gedetailleerde beschrijving:P-Channel 8V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single
Current - Continuous Drain (Id) @ 25 ° C:9A (Tc)
Email:[email protected]

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