Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 4V @ 250µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PowerPAK® 1212-8 |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 1.05 Ohm @ 1A, 10V |
Vermogensverlies (Max): | 3.7W (Ta), 52W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | PowerPAK® 1212-8 |
Andere namen: | SI7119DN-T1-E3TR SI7119DNT1E3 |
Temperatuur: | -50°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Standaard Levertijd: | 33 Weeks |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 666pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
FET Type: | P-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 6V, 10V |
Drain naar de Bron Voltage (Vdss): | 200V |
gedetailleerde beschrijving: | P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8 |
Current - Continuous Drain (Id) @ 25 ° C: | 3.8A (Tc) |
Email: | [email protected] |