SI4398DY-T1-E3
Onderdeel nummer:
SI4398DY-T1-E3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N-CH 20V 19A 8-SOIC
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
74201 Pieces
Aflevertijd:
1-2 days
Data papier:
SI4398DY-T1-E3.pdf

Invoering

We can supply SI4398DY-T1-E3, use the request quote form to request SI4398DY-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4398DY-T1-E3.The price and lead time for SI4398DY-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4398DY-T1-E3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:8-SO
Serie:-
Rds On (Max) @ Id, VGS:2.8 mOhm @ 25A, 10V
Vermogensverlies (Max):1.6W (Ta)
Packaging:Tape & Reel (TR)
Verpakking / doos:8-SOIC (0.154", 3.90mm Width)
Andere namen:SI4398DY-T1-E3TR
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:5620pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:50nC @ 4.5V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):4.5V, 10V
Drain naar de Bron Voltage (Vdss):20V
gedetailleerde beschrijving:N-Channel 20V 19A (Ta) 1.6W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25 ° C:19A (Ta)
Email:[email protected]

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