Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 2.5V @ 250µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | 8-SO |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 3.2 mOhm @ 15A, 10V |
Vermogensverlies (Max): | 3W (Ta), 6W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | 8-SOIC (0.154", 3.90mm Width) |
Andere namen: | SI4164DY-T1-GE3TR SI4164DYT1GE3 |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Standaard Levertijd: | 32 Weeks |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 3545pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4.5V, 10V |
Drain naar de Bron Voltage (Vdss): | 30V |
gedetailleerde beschrijving: | N-Channel 30V 30A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25 ° C: | 30A (Tc) |
Email: | [email protected] |