Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 1V @ 250µA |
Vgs (Max): | ±8V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | 6-TSOP |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 28 mOhm @ 5.1A, 4.5V |
Vermogensverlies (Max): | 1.7W (Ta), 2.7W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | SOT-23-6 Thin, TSOT-23-6 |
Andere namen: | SI3460DDV-T1-GE3TR SI3460DDVT1GE3 |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 666pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 8V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 1.8V, 4.5V |
Drain naar de Bron Voltage (Vdss): | 20V |
gedetailleerde beschrijving: | N-Channel 20V 7.9A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP |
Current - Continuous Drain (Id) @ 25 ° C: | 7.9A (Tc) |
Email: | [email protected] |