RN2701JE(TE85L,F)
RN2701JE(TE85L,F)
Onderdeel nummer:
RN2701JE(TE85L,F)
Fabrikant:
Toshiba Semiconductor and Storage
Beschrijving:
TRANS 2PNP PREBIAS 0.1W ESV
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
24166 Pieces
Aflevertijd:
1-2 days
Data papier:
RN2701JE(TE85L,F).pdf

Invoering

We can supply RN2701JE(TE85L,F), use the request quote form to request RN2701JE(TE85L,F) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN2701JE(TE85L,F).The price and lead time for RN2701JE(TE85L,F) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN2701JE(TE85L,F).We look forward to working with you to establish long-term relations of cooperation

bestek

Staat New & Unused, Original Packing
Oorsprong Contact us
Spanning - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
transistor Type:2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Leverancier Device Pakket:ESV
Serie:-
Weerstand - emitterbasis (R2):4.7 kOhms
Weerstand - basis (R1):4.7 kOhms
Vermogen - Max:100mW
Packaging:Cut Tape (CT)
Verpakking / doos:SOT-553
Andere namen:RN2701JE(TE85LF)CT
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Frequentie - Transition:200MHz
gedetailleerde beschrijving:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):100mA
Email:[email protected]

Quick Request Quote

Onderdeel nummer
Aantal stuks
Bedrijf
E-mail
Telefoon
Comments