NP109N055PUJ-E1B-AY
NP109N055PUJ-E1B-AY
Onderdeel nummer:
NP109N055PUJ-E1B-AY
Fabrikant:
Renesas Electronics America
Beschrijving:
MOSFET N-CH 55V MP-25ZP/TO-263
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
32218 Pieces
Aflevertijd:
1-2 days
Data papier:
NP109N055PUJ-E1B-AY.pdf

Invoering

We can supply NP109N055PUJ-E1B-AY, use the request quote form to request NP109N055PUJ-E1B-AY pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NP109N055PUJ-E1B-AY.The price and lead time for NP109N055PUJ-E1B-AY depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NP109N055PUJ-E1B-AY.We look forward to working with you to establish long-term relations of cooperation

bestek

Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:TO-263
Serie:-
Rds On (Max) @ Id, VGS:3.2 mOhm @ 55A, 10V
Vermogensverlies (Max):1.8W (Ta), 220W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Temperatuur:175°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:10350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:180nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):55V
gedetailleerde beschrijving:N-Channel 55V 110A (Ta) 1.8W (Ta), 220W (Tc) Surface Mount TO-263
Current - Continuous Drain (Id) @ 25 ° C:110A (Ta)
Email:[email protected]

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