Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 2V @ 250µA |
Vgs (Max): | ±10V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | TO-263-5 |
Serie: | HEXFET® |
Rds On (Max) @ Id, VGS: | 18 mOhm @ 35A, 10V |
Vermogensverlies (Max): | 130W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 2190pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 5V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 5V, 10V |
Drain naar de Bron Voltage (Vdss): | 40V |
gedetailleerde beschrijving: | N-Channel 40V 59A (Tc) 130W (Tc) Surface Mount TO-263-5 |
Current - Continuous Drain (Id) @ 25 ° C: | 59A (Tc) |
Email: | [email protected] |