Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 2.35V @ 100µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | DIRECTFET™ MX |
Serie: | HEXFET® |
Rds On (Max) @ Id, VGS: | 1.7 mOhm @ 32A, 10V |
Vermogensverlies (Max): | 2.8W (Ta), 100W (Tc) |
Packaging: | Cut Tape (CT) |
Verpakking / doos: | DirectFET™ Isometric MX |
Andere namen: | IRF6794MTR1PBFCT |
Temperatuur: | -40°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 3 (168 Hours) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 4420pF @ 13V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 4.5V |
FET Type: | N-Channel |
FET Feature: | Schottky Diode (Body) |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4.5V, 10V |
Drain naar de Bron Voltage (Vdss): | 25V |
gedetailleerde beschrijving: | N-Channel 25V 32A (Ta), 200A (Tc) 2.8W (Ta), 100W (Tc) Surface Mount DIRECTFET™ MX |
Current - Continuous Drain (Id) @ 25 ° C: | 32A (Ta), 200A (Tc) |
Email: | [email protected] |