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Huis > producten > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQAF10N80
FQAF10N80
FQAF10N80
Onderdeel nummer:
FQAF10N80
Fabrikant:
AMI Semiconductor / ON Semiconductor
Beschrijving:
MOSFET N-CH 800V 6.7A TO-3PF
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
59246 Pieces
Aflevertijd:
1-2 days
Data papier:
FQAF10N80.pdf
Onderzoek

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We can supply FQAF10N80, use the request quote form to request FQAF10N80 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FQAF10N80.The price and lead time for FQAF10N80 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FQAF10N80.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
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VGS (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:TO-3PF
Serie:QFET®
Rds On (Max) @ Id, VGS:1.05 Ohm @ 3.35A, 10V
Vermogensverlies (Max):113W (Tc)
Packaging:Tube
Verpakking / doos:SC-94
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:71nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):800V
gedetailleerde beschrijving:N-Channel 800V 6.7A (Tc) 113W (Tc) Through Hole TO-3PF
Current - Continuous Drain (Id) @ 25 ° C:6.7A (Tc)
Email:[email protected]

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