Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 4V @ 10mA |
Vgs (Max): | +25V, -10V |
Technologie: | SiCFET (Silicon Carbide) |
Leverancier Device Pakket: | TO-247-4L |
Serie: | C2M™ |
Rds On (Max) @ Id, VGS: | 125 mOhm @ 28A, 20V |
Vermogensverlies (Max): | 277W (Tc) |
Verpakking / doos: | TO-247-4 |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | Not Applicable |
Input Capacitance (Ciss) (Max) @ Vds: | 2250pF @ 1000V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 20V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 20V |
Drain naar de Bron Voltage (Vdss): | 1700V |
gedetailleerde beschrijving: | N-Channel 1700V 40A (Tc) 277W (Tc) Through Hole TO-247-4L |
Current - Continuous Drain (Id) @ 25 ° C: | 40A (Tc) |
Email: | [email protected] |