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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > IXFE80N50
IXFE80N50
IXFE80N50
Modello di prodotti:
IXFE80N50
fabbricante:
IXYS Corporation
Descrizione:
MOSFET N-CH 500V 72A SOT-227B
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
62572 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
IXFE80N50.pdf
Inchiesta

introduzione

We can supply IXFE80N50, use the request quote form to request IXFE80N50 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFE80N50.The price and lead time for IXFE80N50 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFE80N50.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:4.5V @ 8mA
Vgs (Max):±20V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:SOT-227B
Serie:HiPerFET™
Rds On (max) a Id, Vgs:55 mOhm @ 40A, 10V
Dissipazione di potenza (max):580W (Tc)
imballaggio:Tube
Contenitore / involucro:SOT-227-4, miniBLOC
temperatura di esercizio:-40°C ~ 150°C (TJ)
Tipo montaggio:Chassis Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:9890pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:380nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):10V
Tensione drain-source (Vdss):500V
Descrizione dettagliata:N-Channel 500V 72A (Tc) 580W (Tc) Chassis Mount SOT-227B
Corrente - Drain continuo (Id) @ 25 ° C:72A (Tc)
Email:[email protected]

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