FQPF7N65C_F105
FQPF7N65C_F105
Nomor bagian:
FQPF7N65C_F105
Pabrikan:
AMI Semiconductor / ON Semiconductor
Deskripsi:
MOSFET N-CH 650V 7A TO-220F
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
10065 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
FQPF7N65C_F105.pdf

pengantar

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Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:TO-220F
Seri:QFET®
Rds Pada (Max) @ Id, Vgs:1.4 Ohm @ 3.5A, 10V
Power Disipasi (Max):52W (Tc)
Pengemasan:Tube
Paket / Case:TO-220-3 Full Pack
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:1245pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):650V
Detil Deskripsi:N-Channel 650V 7A (Tc) 52W (Tc) Through Hole TO-220F
Current - Continuous Drain (Id) @ 25 ° C:7A (Tc)
Email:[email protected]

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