FQB17N08TM
FQB17N08TM
Nomor bagian:
FQB17N08TM
Pabrikan:
AMI Semiconductor / ON Semiconductor
Deskripsi:
MOSFET N-CH 80V 16.5A D2PAK
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
62493 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
FQB17N08TM.pdf

pengantar

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Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:D²PAK (TO-263AB)
Seri:QFET®
Rds Pada (Max) @ Id, Vgs:115 mOhm @ 8.25A, 10V
Power Disipasi (Max):3.13W (Ta), 65W (Tc)
Pengemasan:Tape & Reel (TR)
Paket / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):80V
Detil Deskripsi:N-Channel 80V 16.5A (Tc) 3.13W (Ta), 65W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25 ° C:16.5A (Tc)
Email:[email protected]

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