FQA33N10L
FQA33N10L
Nomor bagian:
FQA33N10L
Pabrikan:
AMI Semiconductor / ON Semiconductor
Deskripsi:
MOSFET N-CH 100V 36A TO-3P
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
28352 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
FQA33N10L.pdf

pengantar

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Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:2V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:TO-3P
Seri:QFET®
Rds Pada (Max) @ Id, Vgs:52 mOhm @ 18A, 10V
Power Disipasi (Max):163W (Tc)
Pengemasan:Tube
Paket / Case:TO-3P-3, SC-65-3
Suhu Operasional:-55°C ~ 175°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:1630pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:40nC @ 5V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):5V, 10V
Tiriskan untuk Sumber Tegangan (Vdss):100V
Detil Deskripsi:N-Channel 100V 36A (Tc) 163W (Tc) Through Hole TO-3P
Current - Continuous Drain (Id) @ 25 ° C:36A (Tc)
Email:[email protected]

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