UPA2820T1S-E2-AT
Modèle de produit:
UPA2820T1S-E2-AT
Fabricant:
Renesas Electronics America
La description:
MOSFET N-CH 30V 8HVSON
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
55139 Pieces
Heure de livraison:
1-2 days
Fiche technique:
UPA2820T1S-E2-AT.pdf

introduction

We can supply UPA2820T1S-E2-AT, use the request quote form to request UPA2820T1S-E2-AT pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number UPA2820T1S-E2-AT.The price and lead time for UPA2820T1S-E2-AT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# UPA2820T1S-E2-AT.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:-
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Séries:-
Rds On (Max) @ Id, Vgs:5.3 mOhm @ 22A, 10V
Dissipation de puissance (max):1.5W (Ta), 16W (Tc)
Emballage:Tape & Reel (TR)
Package / Boîte:8-PowerWDFN
Température de fonctionnement:150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:2330pF @ 10V
Charge de la porte (Qg) (Max) @ Vgs:50nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):4.5V, 10V
Tension drain-source (Vdss):30V
Description détaillée:N-Channel 30V 22A (Tc) 1.5W (Ta), 16W (Tc) Surface Mount
Courant - Drainage continu (Id) à 25 ° C:22A (Tc)
Email:[email protected]

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