TSM2N100CP ROG
TSM2N100CP ROG
Modèle de produit:
TSM2N100CP ROG
Fabricant:
TSC (Taiwan Semiconductor)
La description:
MOSFET N-CH 1000V 1.85A TO252
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
67622 Pieces
Heure de livraison:
1-2 days
Fiche technique:
TSM2N100CP ROG.pdf

introduction

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Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:5.5V @ 250µA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-252, (D-Pak)
Séries:-
Rds On (Max) @ Id, Vgs:8.5 Ohm @ 900mA, 10V
Dissipation de puissance (max):77W (Tc)
Emballage:Cut Tape (CT)
Package / Boîte:TO-252-3, DPak (2 Leads + Tab), SC-63
Autres noms:TSM2N100CP ROGCT
TSM2N100CP ROGCT-ND
TSM2N100CPROGCT
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):3 (168 Hours)
Délai de livraison standard du fabricant:52 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:625pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:17nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):1000V
Description détaillée:N-Channel 1000V 1.85A (Tc) 77W (Tc) Surface Mount TO-252, (D-Pak)
Courant - Drainage continu (Id) à 25 ° C:1.85A (Tc)
Email:[email protected]

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