STP12N50M2
STP12N50M2
Modèle de produit:
STP12N50M2
Fabricant:
STMicroelectronics
La description:
MOSFET N-CH 500V 10A TO-220AB
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
8123 Pieces
Heure de livraison:
1-2 days
Fiche technique:
STP12N50M2.pdf

introduction

We can supply STP12N50M2, use the request quote form to request STP12N50M2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STP12N50M2.The price and lead time for STP12N50M2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STP12N50M2.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-220
Séries:MDmesh™ II Plus
Rds On (Max) @ Id, Vgs:380 mOhm @ 5A, 10V
Dissipation de puissance (max):85W (Tc)
Emballage:Tube
Package / Boîte:TO-220-3
Autres noms:497-15273-5
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:560pF @ 100V
Charge de la porte (Qg) (Max) @ Vgs:15nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):500V
Description détaillée:N-Channel 500V 10A (Tc) 85W (Tc) Through Hole TO-220
Courant - Drainage continu (Id) à 25 ° C:10A (Tc)
Email:[email protected]

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