SQJ910AEP-T1_GE3
SQJ910AEP-T1_GE3
Modèle de produit:
SQJ910AEP-T1_GE3
Fabricant:
Electro-Films (EFI) / Vishay
La description:
MOSFET 2 N-CH 30V POWERPAK SO8
quantité disponible:
26086 Pieces
Heure de livraison:
1-2 days
Fiche technique:
SQJ910AEP-T1_GE3.pdf

introduction

We can supply SQJ910AEP-T1_GE3, use the request quote form to request SQJ910AEP-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJ910AEP-T1_GE3.The price and lead time for SQJ910AEP-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJ910AEP-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:2.5V @ 250µA
Package composant fournisseur:PowerPAK® SO-8 Dual
Séries:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:7 mOhm @ 12A, 10V
Puissance - Max:48W
Emballage:Tape & Reel (TR)
Package / Boîte:PowerPAK® SO-8 Dual
Température de fonctionnement:-55°C ~ 175°C (TJ)
Type de montage:Surface Mount
Capacité d'entrée (Ciss) (Max) @ Vds:1869pF @ 15V
Charge de la porte (Qg) (Max) @ Vgs:39nC @ 10V
type de FET:2 N-Channel (Dual)
Fonction FET:Standard
Tension drain-source (Vdss):30V
Description détaillée:Mosfet Array 2 N-Channel (Dual) 30V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual
Courant - Drainage continu (Id) à 25 ° C:30A (Tc)
Email:[email protected]

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