SIZ728DT-T1-GE3
SIZ728DT-T1-GE3
Modèle de produit:
SIZ728DT-T1-GE3
Fabricant:
Electro-Films (EFI) / Vishay
La description:
MOSFET 2N-CH 25V 16A 6-POWERPAIR
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
67412 Pieces
Heure de livraison:
1-2 days
Fiche technique:
SIZ728DT-T1-GE3.pdf

introduction

We can supply SIZ728DT-T1-GE3, use the request quote form to request SIZ728DT-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIZ728DT-T1-GE3.The price and lead time for SIZ728DT-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIZ728DT-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:2.2V @ 250µA
Package composant fournisseur:6-PowerPair™
Séries:TrenchFET®
Rds On (Max) @ Id, Vgs:7.7 mOhm @ 18A, 10V
Puissance - Max:27W, 48W
Emballage:Tape & Reel (TR)
Package / Boîte:6-PowerPair™
Autres noms:SIZ728DT-T1-GE3TR
SIZ728DTT1GE3
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:890pF @ 12.5V
Charge de la porte (Qg) (Max) @ Vgs:26nC @ 10V
type de FET:2 N-Channel (Half Bridge)
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):25V
Description détaillée:Mosfet Array 2 N-Channel (Half Bridge) 25V 16A, 35A 27W, 48W Surface Mount 6-PowerPair™
Courant - Drainage continu (Id) à 25 ° C:16A, 35A
Numéro de pièce de base:SIZ728
Email:[email protected]

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