SIA430DJT-T1-GE3
Modèle de produit:
SIA430DJT-T1-GE3
Fabricant:
Electro-Films (EFI) / Vishay
La description:
MOSFET N-CH 20V 12A SC70-6
quantité disponible:
64992 Pieces
Heure de livraison:
1-2 days
Fiche technique:
SIA430DJT-T1-GE3.pdf

introduction

We can supply SIA430DJT-T1-GE3, use the request quote form to request SIA430DJT-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIA430DJT-T1-GE3.The price and lead time for SIA430DJT-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIA430DJT-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:PowerPAK® SC-70-6 Single
Séries:-
Rds On (Max) @ Id, Vgs:13.5 mOhm @ 7A, 10V
Dissipation de puissance (max):19.2W (Tc)
Emballage:Tape & Reel (TR)
Package / Boîte:PowerPAK® SC-70-6
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Délai de livraison standard du fabricant:27 Weeks
Capacité d'entrée (Ciss) (Max) @ Vds:800pF @ 10V
Charge de la porte (Qg) (Max) @ Vgs:18nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):4.5V, 10V
Tension drain-source (Vdss):20V
Description détaillée:N-Channel 20V 12A (Tc) 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single
Courant - Drainage continu (Id) à 25 ° C:12A (Tc)
Email:[email protected]

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