SI7872DP-T1-E3
SI7872DP-T1-E3
Modèle de produit:
SI7872DP-T1-E3
Fabricant:
Electro-Films (EFI) / Vishay
La description:
MOSFET 2N-CH 30V 6.4A PPAK SO-8
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
21851 Pieces
Heure de livraison:
1-2 days
Fiche technique:
SI7872DP-T1-E3.pdf

introduction

We can supply SI7872DP-T1-E3, use the request quote form to request SI7872DP-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI7872DP-T1-E3.The price and lead time for SI7872DP-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI7872DP-T1-E3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:3V @ 250µA
Package composant fournisseur:PowerPAK® SO-8 Dual
Séries:LITTLE FOOT®
Rds On (Max) @ Id, Vgs:22 mOhm @ 7.5A, 10V
Puissance - Max:1.4W
Emballage:Tape & Reel (TR)
Package / Boîte:PowerPAK® SO-8 Dual
Autres noms:SI7872DP-T1-E3TR
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:-
Charge de la porte (Qg) (Max) @ Vgs:11nC @ 4.5V
type de FET:2 N-Channel (Half Bridge)
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):30V
Description détaillée:Mosfet Array 2 N-Channel (Half Bridge) 30V 6.4A 1.4W Surface Mount PowerPAK® SO-8 Dual
Courant - Drainage continu (Id) à 25 ° C:6.4A
Numéro de pièce de base:SI7872
Email:[email protected]

Requête rapide Quote

Modèle de produit
Quantité
Compagnie
Email
Téléphone
Remarques / Notes