NTMD6N02R2
Modèle de produit:
NTMD6N02R2
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
MOSFET 2N-CH 20V 3.92A 8SO
État sans plomb / État RoHS:
Contient du plomb / Non conforme à RoHS
quantité disponible:
8217 Pieces
Heure de livraison:
1-2 days
Fiche technique:
NTMD6N02R2.pdf

introduction

We can supply NTMD6N02R2, use the request quote form to request NTMD6N02R2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NTMD6N02R2.The price and lead time for NTMD6N02R2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NTMD6N02R2.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:1.2V @ 250µA
Package composant fournisseur:8-SOIC
Séries:-
Rds On (Max) @ Id, Vgs:35 mOhm @ 6A, 4.5V
Puissance - Max:730mW
Emballage:Tape & Reel (TR)
Package / Boîte:8-SOIC (0.154", 3.90mm Width)
Autres noms:NTMD6N02R2OS
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Contains lead / RoHS non-compliant
Capacité d'entrée (Ciss) (Max) @ Vds:1100pF @ 16V
Charge de la porte (Qg) (Max) @ Vgs:20nC @ 4.5V
type de FET:2 N-Channel (Dual)
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):20V
Description détaillée:Mosfet Array 2 N-Channel (Dual) 20V 3.92A 730mW Surface Mount 8-SOIC
Courant - Drainage continu (Id) à 25 ° C:3.92A
Numéro de pièce de base:NTMD6N02
Email:[email protected]

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