JANTXV2N6766T1
Modèle de produit:
JANTXV2N6766T1
Fabricant:
Microsemi
La description:
MOSFET N-CH
État sans plomb / État RoHS:
Contient du plomb / Non conforme à RoHS
quantité disponible:
15451 Pieces
Heure de livraison:
1-2 days
Fiche technique:
JANTXV2N6766T1.pdf

introduction

We can supply JANTXV2N6766T1, use the request quote form to request JANTXV2N6766T1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number JANTXV2N6766T1.The price and lead time for JANTXV2N6766T1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# JANTXV2N6766T1.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-254AA
Séries:Military, MIL-PRF-19500/543
Rds On (Max) @ Id, Vgs:90 mOhm @ 30A, 10V
Dissipation de puissance (max):4W (Ta), 150W (Tc)
Emballage:Bulk
Package / Boîte:TO-254-3, TO-254AA (Straight Leads)
Autres noms:JANTXV2N6766T1-MIL
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Contains lead / RoHS non-compliant
Charge de la porte (Qg) (Max) @ Vgs:115nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):200V
Description détaillée:N-Channel 200V 30A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-254AA
Courant - Drainage continu (Id) à 25 ° C:30A (Tc)
Email:[email protected]

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