Français
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Kongeriket Dansk Svenska Hrvatska✕
À propos de nous | Nous contacter | Demander un devis |
Accueil > Centre des produits > Produits semi-conducteurs discrets > Diodes - redresseurs - Single > JANTXV1N6075
JANTXV1N6075
Modèle de produit:
JANTXV1N6075
Fabricant:
Microsemi
La description:
DIODE GEN PURP 150V 850MA AXIAL
État sans plomb / État RoHS:
Contient du plomb / Non conforme à RoHS
quantité disponible:
57419 Pieces
Heure de livraison:
1-2 days
Fiche technique:
JANTXV1N6075.pdf
Enquête

introduction

We can supply JANTXV1N6075, use the request quote form to request JANTXV1N6075 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number JANTXV1N6075.The price and lead time for JANTXV1N6075 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# JANTXV1N6075.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - directe (Vf) (max) @ Si:2.04V @ 9.4A
Tension - inverse (Vr) (max):150V
Package composant fournisseur:A-PAK
La vitesse:Fast Recovery = 200mA (Io)
Séries:Military, MIL-PRF-19500/503
Temps de recouvrement inverse (trr):30ns
Emballage:Bulk
Package / Boîte:A, Axial
Autres noms:1086-2851
1086-2851-MIL
Température d'utilisation - Jonction:-65°C ~ 155°C
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:14 Weeks
Statut sans plomb / Statut RoHS:Contains lead / RoHS non-compliant
Type de diode:Standard
Description détaillée:Diode Standard 150V 850mA Through Hole A-PAK
Courant - fuite, inverse à Vr:1µA @ 150V
Courant - Rectifié moyenne (Io):850mA
Capacité à Vr, F:-
Email:[email protected]

Requête rapide Quote

Modèle de produit
Quantité
Compagnie
Email
Téléphone
Remarques / Notes

pièces connexes JANTXV1N6075

image Modèle de produit Fabricant La description Vue
JANTXV1N6103AUS Image JANTXV1N6103AUS Microsemi TVS DIODE 5.7V 11.2V B SQ-MELF Enquête
JANTXV1N5968US Microsemi DIODE ZENER 5.6V 5W AXIAL Enquête
JANTXV1N6073 Microsemi DIODE GEN PURP 50V 850MA AXIAL Enquête
JANTXV1N6041A Microsemi TVS DIODE 10V 16.7V DO13 Enquête
JANTXV1N6059A Microsemi TVS DIODE 58V 92V DO13 Enquête
JANTXV1N6076 Microsemi DIODE GEN PURP 50V 1.3A AXIAL Enquête
JANTXV1N6053A Microsemi TVS DIODE 33V 53.9V DO13 Enquête
JANTXV1N6103 Microsemi TVS DIODE 5.7V 11.76V AXIAL Enquête
JANTXV1N6063A Microsemi TVS DIODE 82V 137V DO13 Enquête
JANTXV1N6036A Microsemi TVS DIODE 6V 11.3V DO13 Enquête
JANTXV1N6078 Microsemi DIODE GEN PURP 150V 1.3A AXIAL Enquête
JANTXV1N5968 Image JANTXV1N5968 Microsemi DIODE ZENER 5.6V 5W AXIAL Enquête
JANTXV1N6077 Microsemi DIODE GEN PURP 100V 1.3A AXIAL Enquête
JANTXV1N6103A Microsemi TVS DIODE 5.7V 11.2V AXIAL Enquête
JANTXV1N6047A Microsemi TVS DIODE 18V 30.6V DO13 Enquête
JANTXV1N6103US Image JANTXV1N6103US Microsemi TVS DIODE 5.7V 11.76V B SQ-MELF Enquête
JANTXV1N6100 Microsemi TVS DIODE 14CFLATPACK Enquête
JANTXV1N6074 Microsemi DIODE GEN PURP 100V 850MA AXIAL Enquête
JANTXV1N6101 Microsemi TVS DIODE 16CDIP Enquête
JANTXV1N6081 Microsemi Corporation DIODE GEN PURP 150V 2A AXIAL Enquête

Latest Nouvelles