JANTXV1N3070UR-1
Modèle de produit:
JANTXV1N3070UR-1
Fabricant:
Microsemi
La description:
DIODE GEN PURP 175V 100MA DO7
État sans plomb / État RoHS:
Contient du plomb / Non conforme à RoHS
quantité disponible:
53913 Pieces
Heure de livraison:
1-2 days
Fiche technique:
JANTXV1N3070UR-1.pdf

introduction

We can supply JANTXV1N3070UR-1, use the request quote form to request JANTXV1N3070UR-1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number JANTXV1N3070UR-1.The price and lead time for JANTXV1N3070UR-1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# JANTXV1N3070UR-1.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Inverse de crête (max):Standard
Tension - directe (Vf) (max) @ Si:100mA
Tension - Ventilation:DO-7
Séries:Military, MIL-PRF-19500/169
État RoHS:Bulk
Temps de recouvrement inverse (trr):Small Signal =< 200mA (Io), Any Speed
Résistance @ Si, F:-
Polarisation:DO-204AA, DO-7, Axial
Autres noms:1086-15684
1086-15684-MIL
Température d'utilisation - Jonction:50µs
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Référence fabricant:JANTXV1N3070UR-1
Description élargie:Diode Standard 175V 100mA Through Hole DO-7
Configuration diode:100nA @ 175V
La description:DIODE GEN PURP 175V 100MA DO7
Courant - fuite, inverse à Vr:1V @ 100mA
Courant - Moyen redressé (Io) (par diode):175V
Capacité à Vr, F:-65°C ~ 175°C
Email:[email protected]

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