IXTT30N60P
IXTT30N60P
Modèle de produit:
IXTT30N60P
Fabricant:
IXYS Corporation
La description:
MOSFET N-CH 600V 30A TO-268 D3
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
73624 Pieces
Heure de livraison:
1-2 days
Fiche technique:
IXTT30N60P.pdf

introduction

We can supply IXTT30N60P, use the request quote form to request IXTT30N60P pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTT30N60P.The price and lead time for IXTT30N60P depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTT30N60P.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-268
Séries:PolarHV™
Rds On (Max) @ Id, Vgs:240 mOhm @ 15A, 10V
Dissipation de puissance (max):540W (Tc)
Emballage:Tube
Package / Boîte:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:24 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:5050pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:82nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):600V
Description détaillée:N-Channel 600V 30A (Tc) 540W (Tc) Surface Mount TO-268
Courant - Drainage continu (Id) à 25 ° C:30A (Tc)
Email:[email protected]

Requête rapide Quote

Modèle de produit
Quantité
Compagnie
Email
Téléphone
Remarques / Notes