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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > IXTQ102N20T
IXTQ102N20T
IXTQ102N20T
Modèle de produit:
IXTQ102N20T
Fabricant:
IXYS Corporation
La description:
MOSFET N-CH 200V 102A TO3P
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
19483 Pieces
Heure de livraison:
1-2 days
Fiche technique:
IXTQ102N20T.pdf
Enquête

introduction

We can supply IXTQ102N20T, use the request quote form to request IXTQ102N20T pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTQ102N20T.The price and lead time for IXTQ102N20T depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTQ102N20T.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4.5V @ 1mA
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-3P
Séries:TrenchHV™
Rds On (Max) @ Id, Vgs:23 mOhm @ 500mA, 10V
Dissipation de puissance (max):750W (Tc)
Emballage:Tube
Package / Boîte:TO-3P-3, SC-65-3
Température de fonctionnement:-55°C ~ 175°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:6800pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:114nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension drain-source (Vdss):200V
Description détaillée:N-Channel 200V 102A (Tc) 750W (Tc) Through Hole TO-3P
Courant - Drainage continu (Id) à 25 ° C:102A (Tc)
Email:[email protected]

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