FCPF190N65S3R0L
FCPF190N65S3R0L
Modèle de produit:
FCPF190N65S3R0L
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
SUPERFET3 650V TO220F PKG
quantité disponible:
35581 Pieces
Heure de livraison:
1-2 days
Fiche technique:
FCPF190N65S3R0L.pdf

introduction

We can supply FCPF190N65S3R0L, use the request quote form to request FCPF190N65S3R0L pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FCPF190N65S3R0L.The price and lead time for FCPF190N65S3R0L depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FCPF190N65S3R0L.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4.5V @ 1.7mA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-220F-3
Séries:SuperFET® III
Rds On (Max) @ Id, Vgs:190 mOhm @ 8.5A, 10V
Dissipation de puissance (max):144W (Tc)
Package / Boîte:TO-220-3 Full Pack
Autres noms:FCPF190N65S3R0L-ND
FCPF190N65S3R0LOS
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):Not Applicable
Statut sans plomb:Lead free
Capacité d'entrée (Ciss) (Max) @ Vds:1350pF @ 400V
Charge de la porte (Qg) (Max) @ Vgs:33nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):650V
Description détaillée:N-Channel 650V 17A (Tc) 144W (Tc) Through Hole TO-220F-3
Courant - Drainage continu (Id) à 25 ° C:17A (Tc)
Email:[email protected]

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