DTD123TCHZGT116
DTD123TCHZGT116
Modèle de produit:
DTD123TCHZGT116
Fabricant:
LAPIS Semiconductor
La description:
500MA/40V DIGITAL TRANSISTOR (WI
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
71469 Pieces
Heure de livraison:
1-2 days
Fiche technique:
1.DTD123TCHZGT116.pdf2.DTD123TCHZGT116.pdf

introduction

We can supply DTD123TCHZGT116, use the request quote form to request DTD123TCHZGT116 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DTD123TCHZGT116.The price and lead time for DTD123TCHZGT116 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DTD123TCHZGT116.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Transistor Type:NPN - Pre-Biased + Diode
Package composant fournisseur:SST3
Séries:Automotive, AEC-Q101
Résistance - Base (R1):2.2 kOhms
Puissance - Max:200mW
Emballage:Cut Tape (CT)
Package / Boîte:TO-236-3, SC-59, SOT-23-3
Autres noms:DTD123TCHZGT116CT
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:7 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:200MHz
Description détaillée:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 500mA 200MHz 200mW Surface Mount SST3
Gain en courant DC (hFE) (Min) @ Ic, Vce:100 @ 50mA, 5V
Courant - Collecteur Cutoff (Max):500nA (ICBO)
Courant - Collecteur (Ic) (max):500mA
Email:[email protected]

Requête rapide Quote

Modèle de produit
Quantité
Compagnie
Email
Téléphone
Remarques / Notes