APTMC60TL11CT3AG
APTMC60TL11CT3AG
Modèle de produit:
APTMC60TL11CT3AG
Fabricant:
Microsemi
La description:
MOSFET 4N-CH 1200V 28A SP3
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
56924 Pieces
Heure de livraison:
1-2 days
Fiche technique:
APTMC60TL11CT3AG.pdf

introduction

We can supply APTMC60TL11CT3AG, use the request quote form to request APTMC60TL11CT3AG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTMC60TL11CT3AG.The price and lead time for APTMC60TL11CT3AG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTMC60TL11CT3AG.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:2.2V @ 1mA
Package composant fournisseur:SP3
Séries:-
Rds On (Max) @ Id, Vgs:98 mOhm @ 20A, 20V
Puissance - Max:125W
Emballage:Bulk
Package / Boîte:SP3
Température de fonctionnement:-40°C ~ 150°C (TJ)
Type de montage:Chassis Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:32 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:950pF @ 1000V
Charge de la porte (Qg) (Max) @ Vgs:49nC @ 20V
type de FET:4 N-Channel (Three Level Inverter)
Fonction FET:Silicon Carbide (SiC)
Tension drain-source (Vdss):1200V (1.2kV)
Description détaillée:Mosfet Array 4 N-Channel (Three Level Inverter) 1200V (1.2kV) 28A (Tc) 125W Chassis Mount SP3
Courant - Drainage continu (Id) à 25 ° C:28A (Tc)
Email:[email protected]

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