AOTF11C60
AOTF11C60
Modèle de produit:
AOTF11C60
Fabricant:
Alpha and Omega Semiconductor, Inc.
La description:
MOSFET N-CH 600V 11A TO220F
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
14209 Pieces
Heure de livraison:
1-2 days
Fiche technique:
1.AOTF11C60.pdf2.AOTF11C60.pdf

introduction

We can supply AOTF11C60, use the request quote form to request AOTF11C60 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number AOTF11C60.The price and lead time for AOTF11C60 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# AOTF11C60.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-220-3F
Séries:-
Rds On (Max) @ Id, Vgs:400 mOhm @ 5.5A, 10V
Dissipation de puissance (max):50W (Tc)
Emballage:Tube
Package / Boîte:TO-220-3 Full Pack
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:2010pF @ 50V
Charge de la porte (Qg) (Max) @ Vgs:42nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):600V
Description détaillée:N-Channel 600V 11A (Tc) 50W (Tc) Through Hole TO-220-3F
Courant - Drainage continu (Id) à 25 ° C:11A (Tc)
Email:[email protected]

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