Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 2.4V @ 1mA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-92-3 |
Serie: | - |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 500mA, 10V |
Power Dissipation (Max): | 1W (Tc) |
Emballage: | Bulk |
Pakke / tilfælde: | TO-226-3, TO-92-3 (TO-226AA) |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 5 Weeks |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 50pF @ 25V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 5V, 10V |
Afløb til Source Voltage (VDSS): | 60V |
Detaljeret beskrivelse: | N-Channel 60V 300mA (Tj) 1W (Tc) Through Hole TO-92-3 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 300mA (Tj) |
Email: | [email protected] |