Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 3.4V @ 250µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PowerPAK® SO-8 |
Serie: | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs: | 1.7 mOhm @ 20A, 10V |
Power Dissipation (Max): | 104W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | PowerPAK® SO-8 |
Andre navne: | SIR626DP-T1-RE3TR |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 32 Weeks |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 5130pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 7.5V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 6V, 10V |
Afløb til Source Voltage (VDSS): | 60V |
Detaljeret beskrivelse: | N-Channel 60V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 100A (Tc) |
Email: | [email protected] |