SI2367DS-T1-GE3
Varenummer:
SI2367DS-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET P-CH 20V 3.8A SOT-23
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
18797 Pieces
Leveringstid:
1-2 days
Datablad:
SI2367DS-T1-GE3.pdf

Introduktion

We can supply SI2367DS-T1-GE3, use the request quote form to request SI2367DS-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI2367DS-T1-GE3.The price and lead time for SI2367DS-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI2367DS-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:SOT-23-3 (TO-236)
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:66 mOhm @ 2.5A, 4.5V
Power Dissipation (Max):960mW (Ta), 1.7W (Tc)
Emballage:Tape & Reel (TR)
Pakke / tilfælde:TO-236-3, SC-59, SOT-23-3
Andre navne:SI2367DS-T1-GE3-ND
SI2367DS-T1-GE3TR
SI2367DST1GE3
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:561pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:23nC @ 8V
FET Type:P-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):1.8V, 4.5V
Afløb til Source Voltage (VDSS):20V
Detaljeret beskrivelse:P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:3.8A (Tc)
Email:[email protected]

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