Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 900mV @ 250µA |
Vgs (Max): | ±6V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | SC-89-3 |
Serie: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 600mA, 4.5V |
Power Dissipation (Max): | 250mW (Ta) |
Emballage: | Cut Tape (CT) |
Pakke / tilfælde: | SC-89, SOT-490 |
Andre navne: | SI1012X-T1-E3CT SI1012XT1E3 |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs: | 0.75nC @ 4.5V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 1.8V, 4.5V |
Afløb til Source Voltage (VDSS): | 20V |
Detaljeret beskrivelse: | N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 500mA (Ta) |
Email: | [email protected] |