Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 2.2V @ 55µA |
Vgs (Max): | ±16V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO220-3-1 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 7.9 mOhm @ 43A, 10V |
Power Dissipation (Max): | 105W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 |
Andre navne: | IPP80N06S3L-08-ND IPP80N06S3L-08IN IPP80N06S3L08X IPP80N06S3L08XK SP000088127 |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 6475pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 134nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 5V, 10V |
Afløb til Source Voltage (VDSS): | 55V |
Detaljeret beskrivelse: | N-Channel 55V 80A (Tc) 105W (Tc) Through Hole PG-TO220-3-1 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 80A (Tc) |
Email: | [email protected] |