Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 4V @ 39µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO-220-3 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 35A, 10V |
Power Dissipation (Max): | 71W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 |
Andre navne: | IPP26CNE8N G-ND IPP26CNE8NG IPP26CNE8NGX IPP26CNE8NGXK SP000096472 |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 3 (168 Hours) |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 2070pF @ 40V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 85V |
Detaljeret beskrivelse: | N-Channel 85V 35A (Tc) 71W (Tc) Through Hole PG-TO-220-3 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 35A (Tc) |
Email: | [email protected] |