IPD12CNE8N G
IPD12CNE8N G
Varenummer:
IPD12CNE8N G
Fabrikant:
International Rectifier (Infineon Technologies)
Beskrivelse:
MOSFET N-CH 85V 67A TO252-3
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
60553 Pieces
Leveringstid:
1-2 days
Datablad:
IPD12CNE8N G.pdf

Introduktion

We can supply IPD12CNE8N G, use the request quote form to request IPD12CNE8N G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPD12CNE8N G.The price and lead time for IPD12CNE8N G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPD12CNE8N G.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:4V @ 83µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:PG-TO252-3
Serie:OptiMOS™
Rds On (Max) @ Id, Vgs:12.4 mOhm @ 67A, 10V
Power Dissipation (Max):125W (Tc)
Emballage:Tape & Reel (TR)
Pakke / tilfælde:TO-252-3, DPak (2 Leads + Tab), SC-63
Andre navne:IPD12CNE8N G-ND
IPD12CNE8NG
SP000096477
Driftstemperatur:-55°C ~ 175°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:4340pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:64nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):85V
Detaljeret beskrivelse:N-Channel 85V 67A (Tc) 125W (Tc) Surface Mount PG-TO252-3
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:67A (Tc)
Email:[email protected]

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